Public Title High Voltage N-Channel Insulated Gate Biploar Transistor (IGBT) in Silicon Carbide Division Lead Inventor Cooper, Jr., James Public Description Insulated Gate Bipolar Transistors (IGBTs) combine the low drive characteristic of metal oxide semiconductor field effect transistors and the high power handling characteristic of bipolar transistors. These features make IGBTs ideal for high voltage switching applications. The use of silicon carbide as a process material yields IGBTs with even higher breakdown voltage capability, but introduces high parasitic series resistance. A Purdue University inventor has developed a method and process for fabricating IGBTs in silicon carbide that avoids this high parasitic resistance, while preserving all other advantages. Patent Status Public References Key Words Manager Hilton Turner Email haturner@prf.org Telephone 765-588-3479 Fax 765-463-3486   Back to List